moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers ?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 april 2009 moc215m, moc216m, moc217m small outline surface mount phototransistor optocouplers features u.l. recognized (file #e90700, volume 2) vde recognized (file #136616) (add option ??for vde approval, i.e, moc205vm) convenient plastic soic-8 surface mountable package style low led input current required for easier logic interfacing standard soic-8 footprint, with 0.050" lead spacing compatible with dual wave, vapor phase and ir reflow soldering high input-output isolation of 2500 v ac(rms) guaranteed applications low power logic circuits interfacing and coupling systems of different potentials and impedances telecommunications equipment portable electronics description these devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. they are ideally suited for high density applications, and eliminate the need for through- the-board mounting. marking information moc215m = 215 moc216m = 216 moc217m = 217 schematic base n/c anode cathode 1 2 3 4 5 6 7 8 emitter collector n/c n/c
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 2 moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers absolute maximum ratings (t a = 25? unless otherwise speci?d) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. notes: 1. isolation surge voltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1 and 2 are common and pins 5, 6 and 7 are common. symbol rating value unit emitter i f f orward current ?continuous 60 ma i f (pk) forward current ?peak (pw = 100?, 120pps) 1.0 a v r reverse voltage 6.0 v p d led power dissipation @ t a = 25? derate above 25? 90 0.8 mw mw/? detector v ceo collector-emitter voltage 30 v v cbo collector-base voltage 70 v v eco emitter-collector voltage 7.0 v i c collector current-continuous 150 ma p d detector power dissipation @ t a = 25? derate above 25? 150 1.76 mw mw/? tot al device v iso input-output isolation voltage (f = 60hz, t = 1 min.) (1)(2) 2500 vac(rms) p d t otal device power dissipation @ t a = 25? derate above 25? 250 2.94 mw mw/? t a ambient operating temperature range -40 to +100 ? t stg storage temperature range -40 to +125 ?
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 3 moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers electrical characteristics (t a = 25? unless otherwise speci?d) *typical values at t a = 25? notes: 1. isolation surge voltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1 and 2 are common and pins 5, 6 and 7 are common. 3. v iso rating of 2500 v ac(rms) for t = 1 min. is equivalent to a rating of 3,000 v ac(rms) for t = 1 sec. 4. current transfer ratio (ctr) = i c /i f x 100%. symbol characteristic test conditions min. typ.* max. unit emitter v f f orward voltage i f = 1.0ma 1.07 1.3 v i r reverse leakage current v r = 6.0v 0.001 100 ? c capacitance 18 pf detector i ceo collector-emitter dark current v ce = 5.0v, t a = 25? 1.0 50 na v ce = 5.0v, t a = 100? 1.0 ? bv ceo collector-emitter breakdown voltage i c = 100? 30 100 v bv eco emitter-collector breakdown voltage i e = 100? 7.0 10 v c ce collector-emitter capacitance f = 1.0mhz, v ce = 0 7.0 pf coupled ctr output collector current (4) moc215m moc216m moc217m i f = 1.0ma, v ce = 5.0v 20 50 100 % v ce(sat) collector-emitter saturation voltage i c = 100?, i f = 1.0ma 0.4 v t on tu r n-on time i c = 2.0ma, v cc = 10v, r l = 100 ? , (fig. 10) 4.0 ? t off tu r n-off time i c = 2.0ma, v cc = 10v, r l = 100 ? (fig. 10) 4.0 ? t r rise time i c = 2.0ma, v cc = 10v, r l = 100 ? (fig. 10) 3.0 ? t f f all time i c = 2.0ma, v cc = 10v, r l = 100 ? (fig. 10) 3.0 ? v iso input-output isolation voltage (1)(2)(3) f = 60 hz, t = 1.0 min. 2500 vac(rms) r iso isolation resistance (2) v i-o = 500v 10 11 ? c iso isolation capacitance (2) v i-o = 0, f = 1.0mhz 0.2 pf
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 4 moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers typical performance curves fig. 2 output curent vs. input current i f ?led input current (ma) 0.1 1 10 100 i c ?output coll ector current (nor malized) 0.01 0.1 1 10 v ce = 5v normalized to i f = 10 ma fig. 3 output current vs. ambient temperature t a ?ambien t temperature ( c) -80 -60 -40 -20 0 20 40 60 80 100 120 i c ?output coll ector curren t (normalized) 0.1 1 10 normalized to t a = 25 c fig. 4 output current vs. collector-emitter voltage v ce ?collector-emit ter voltage (v) 012345678910 i c ?output coll ector current (normalized) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i f = 10 ma norm alized to v ce = 5v fig. 5 dark current vs. ambient temperature t a ?ambien t temperature ( c) 0204 06080100 i ceo ?collecto r -emitter dark current (na) 0.1 1 10 100 1000 10000 v ce = 10v i f ?led forward current (ma) v f ?forward voltage (v) fig. 1 led forward voltage vs. forward current 110 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = ?5 c t a = 25 c t a = 100 c norm fig. 6 normalized t on vs. r be r be base resistance (m ? ) 0.01 0.1 1 10 100 alized t on 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v cc = 10v i c = 2ma r l = 100 ? normalized to : t on at r be = open
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 5 moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers typical performance curves (continued) figure 10. switching time test circuit and waveforms 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.0 0.8 0.9 i f = 20ma i f = 10 ma i f = 5ma fig. 8 ctr vs. r be (saturated) r be ?base resistance (k ? ) 10 100 1000 normalized ctr v ce = 0.3v, ta = 25 c normalized to: ctr at r be = open 0.0 0.2 0.4 0.6 1.0 1.2 1.4 1.6 0.8 fig. 7 normalized t off vs. r be r be ?base resistance (m ? ) 0.01 0.1 1 10 100 normalized t off 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.0 0.8 0.9 i f = 20ma i f = 10 ma i f = 5ma fig. 9 ctr vs. r be (unsaturated) r be ?base resistance (k ? ) 10 100 1000 normalized ctr v ce = 5v, ta = 25 c normalized to: ctr at r be = open v cc = 10v i c = 2ma r l = 100 ? normalized to: t off at r be = open output pulse input pulse test circuit t r t f input i f r l r be v cc = 10v output t on 10% 90% t off i c adjust i f to produce i c = 2ma waveforms
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 6 moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers package dimensions 8-pin soic surface mount recommended pad layout pa c kage drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package speci?ations do not expand the terms of fairchild s worldwide terms and conditions, speci?ally the warranty therein, which covers fairchild products. always visit fairchild semiconductor s online packaging area for the most recent package drawings: http://www .f airchildsemi.com/pac kaging/ lead coplanarity: 0.004 (0.10) max 0.202 (5.13) 0.182 (4.63) 0.021 (0.53) 0.011 (0.28) 0.050 (1.27) typ. 0.164 (4.16) 1 8 0.144 (3.66) 0.244 (6.19) 0.224 (5.69) 0.143 (3.63) 0.123 (3.13) 0.008 (0.20) 0.003 (0.08) 0.010 (0.25) 0.006 (0.16) seating p lane 0.024 (0.61) 0.050 (1.27) dimensions in inches (mm). 0.155 (3.94) 0.275 (6.99) 0.060 (1.52)
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 7 moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers ordering information marking information option order entry identi?r description vv vde 0884 r2 r2 tape and reel (2500 units per reel) r2v r2v vde 0884, tape and reel (2500 units per reel) 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code 215 s yy x v
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 8 moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers carrier tape specifications 4.0 0.10 1.5 min user direction of feed 2.0 0.05 1.75 0.10 5.5 0.05 12.0 0.3 8.0 0.10 0.30 max 8.3 0.10 3.50 0.20 dimensions in mm 0.1 max 6.40 0.20 5.20 0.20 1.5 0.1
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 9 moc215m, moc216m, moc217m ?small outline surface mount phototransistor optocouplers re?w pro?e pro?e freature pb-free assembly pro?e t emperature min. (tsmin) 150? t emperature max. (tsmax) 200? time (t s ) from (tsmin to tsmax) 60?20 seconds ramp-up rate (t l to t p ) 3?/second max. liquidous temperature (t l ) 217? time (t l ) maintained above (t l ) 60?50 seconds p eak body package temperature 260? +0? / ?? time (t p ) within 5? of 260? 30 seconds ramp-down rate (t p to t l ) 6?/second max. time 25? to peak temperature 8 minutes max. time (seconds) te mperature ( c) ti me 25? to peak 260 240 220 200 180 160 140 120 100 80 60 40 20 0 t l t s t l t p t p ts m a x ts m i n 120 preheat area max. ramp-up rate = 3?/s max. ramp-down rate = 6?/s 240 360
?005 fairchild semiconductor corporation www.fairchildsemi.com moc215m, moc216m, moc217m rev. 1.0.1 10 tradem arks th e following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its global subsidiaries ,and is not in tended to be an exhaustive list of all such trademarks. auto-spm build it now coreplus corepower crossvolt ctl current transfer logic ecospark e fficentmax ezswitch * * fair child fairchild semiconductor fa ct quiet series fact f ast fa stvcore fetbench flashwriter * fps f-pfs frfet global power resource sm green fps green fps e-series g max gto in tellimax isoplanar me gabuck mi crocoupler microfet mi cropak m illerdrive moti onmax mo tion-spm optologic op toplanar pdp spm powe r-spm po we rtrench powerxs pr ogrammable active droop qfet qs quiet series r apidconfigure saving our world, 1mw/w/kw at a time sm artmax smart start spm stealth s uperfet sup ersot -3 s upersot -6 s upersot -8 s upremos syncfet sy nc-lock * th ep ower franchise ti nyboost tinybuck ti nylogic tinyopto tinypower tinypwm tinywire trifault detect t ruecurrent * serdes uhc ultra frfet unifet vcx vi sualmax xs *t rademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fa i rchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild? 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